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T101P3H9 20TTS MBRD350 IE0312H 04018 MMSZ5 SG2845N CM509
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  inchange semiconductor product specification silicon npn power transistors BUT18F but18af description ? ? with to-220fa package ? high voltage ,high speed applications ? converters ? inverters ? switching regulators ? motor control systems pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit BUT18F 850 v cbo collector-base voltage but18af open emitter 1000 v BUT18F 400 v ceo collector-emitter voltage but18af open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a i bm base current-peak 6 a p tot total power dissipation t c =25 ?? 33 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUT18F but18af characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BUT18F 400 v ceo(sus) collector-emitter sustaining voltage but18af i c =0.1a; i b =0;l=25mh 450 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 1.5 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.3 v BUT18F v ce =850v ;v be =0 t j =125 ?? 1.0 2.0 i ces collector cut-off current but18af v ce =1000v ;v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =10ma ; v ce =5v 10 35 h fe-2 dc current gain i c =1a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 | s t s storage time 4.0 | s t f fall time i c =4a; i b1 =-i b2 =0.8a v cc =250v 0.8 | s
inchange semiconductor product specification 3 silicon npn power transistors BUT18F but18af package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)


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